Strain selectivity of SiGe wet chemical etchants

Details Strain selectivity of SiGe wet chemical etchants Strain selectivity of SiGe wet chemical etchants

2008-01-28

arxiv.org/abs/0801.4211v1

Physics

Condensed Matter

Materials Science

13 pages, 4 figures, regular paper

Scientific paper

We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants are isotropic with no preferential etching of particular facets.

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