Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Details Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

2007-02-21

arxiv.org/abs/cond-mat/0702491v1

Journal of Applied Physics 101 (15/02/2007) 033536

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2435072

The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is investigated by X-ray Diffraction (XRD), Raman Scattering and Cathodoluminescence (CL). The strain relaxation mechanisms are analyzed for each miscut angle. At a microscopic scale, the GaN layer grown on on-axis substrate has a slight and homogeneous tensile in-plane stress due to a uniform distribution of threading dislocations over the whole surface. The GaN layers grown on miscut substrates presented cracks, separating areas which have a stronger tensile in-plane stress but a more elastic strain. The plastic relaxation mechanisms involved in these layers are attributed to the step flow growth on misoriented surfaces (dislocations and stacking faults) and to the macroscopical plastic release of additional thermoelastic stress upon cooling down (cracks).

Affiliated with

Also associated with

No associations

Rating

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-83908