Strain induced stabilization of stepped Si and Ge surfaces near (001)

Details Strain induced stabilization of stepped Si and Ge surfaces near (001) Strain induced stabilization of stepped Si and Ge surfaces near (001)

2002-05-09

arxiv.org/abs/cond-mat/0205196v2

Applied Physics Letters 81, 364-366 (2002)

Physics

Condensed Matter

to appear in Appl. Phys. Lett.; v2=minor corrections,figs resized

Scientific paper

10.1063/1.1491611

We report on calculations of the formation energies of several [100] and [110] oriented step structures on biaxially stressed Si and Ge (001) surfaces. It is shown that a novel rebonded [100] oriented single-height step is strongly stabilized by compressive strain compared to most well-known step structures. We propose that the side walls of ``hut''-shaped quantum dots observed in recent experiments on SiGe/Si films are made up of these steps. Our calculations provide an explanation for the nucleationless growth of shallow mounds, with steps along the [100] and [110] directions in low- and high-misfit films, respectively, and for the stability of the (105) facets under compressive strain.

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