Strain-induced quantum ring hole states in a gated vertical quantum dot

Details Strain-induced quantum ring hole states in a gated vertical quantum dot Strain-induced quantum ring hole states in a gated vertical quantum dot

2002-04-22

arxiv.org/abs/cond-mat/0204457v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.89.096804

We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot, which can confine hole states exhibiting quantum ring characteristics. The magnetotunneling spectroscopy exhibits the predicted periodicity of energy states in \phi/\phi0, but the magnitude of the energy shifts is larger than predicted by simple ring theory. Our results suggest a new way to fabricate and study quantum ring structures.

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