Strain Gradients in Epitaxial Ferroelectrics

Details Strain Gradients in Epitaxial Ferroelectrics Strain Gradients in Epitaxial Ferroelectrics

2004-11-18

arxiv.org/abs/cond-mat/0411471v1

Physical Review B 72, 020102R (2005)

Physics

Condensed Matter

Materials Science

4 pages, 3 embedded figures (1 color), revTex4

Scientific paper

10.1103/PhysRevB.72.020102

X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thickness reveals the presence of internal strain gradients across the film thickness and allows us to propose a functional form for the internal strain profile. We use this to calculate the direct influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of thin films with decreasing thickness, in excellent agreement with the observed behaviour. This work highlights the link between strain relaxation and strain gradients in epitaxial films, and shows the pressing need to avoid strain gradients in order to obtain thin ferroelectrics with bulk-like properties.

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