Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

Details Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

2004-12-09

arxiv.org/abs/cond-mat/0412254v1

Physics

Condensed Matter

Materials Science

To be presented at the 5th Low Dimensional Structure and Devices, Cancun, Mexico, 12-17 December 2004. 4 pages, 4 figures

Scientific paper

Precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (MD) experiments. Tiny sample misalignments can compromise systematic usage of MD in studies where accuracy is an important issue. In this work, theoretical treatment and experimental methods for correcting residual misalignment errors are presented and applied to probe the induced strain of buried InAs quantum dots on GaAs (001) substrates.

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