Strain enhanced electron cooling in a degenerately doped semiconductor

Details Strain enhanced electron cooling in a degenerately doped semiconductor Strain enhanced electron cooling in a degenerately doped semiconductor

2011-11-02

arxiv.org/abs/1111.0465v2

Applied Physics Letters 99, 251908 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 5 figures

Scientific paper

10.1063/1.3670330

Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.

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