Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal VO2 beams

Details Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal VO2 beams Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal VO2 beams

2009-07-27

arxiv.org/abs/0907.4769v1

Physics

Condensed Matter

Strongly Correlated Electrons

14 pages, 4 figures, with supplementary information

Scientific paper

Spatial phase inhomogeneity at the nano- to microscale is widely observed in strongly-correlated electron materials. The underlying mechanism and possibility of artificially controlling the phase inhomogeneity are still open questions of critical importance for both the phase transition physics and device applications. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO2. By continuously tuning strain over a wide range in single-crystal VO2 micro- and nanobeams, here we demonstrate the nucleation and manipulation of one-dimensionally ordered metal-insulator domain arrays along the beams. Mott transition is achieved in these beams at room temperature by active control of strain. The ability to engineer phase inhomogeneity with strain lends insight into correlated electron materials in general, and opens opportunities for designing and controlling the phase inhomogeneity of correlated electron materials for micro- and nanoscale device applications.

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