Strain driven migration of In during the growth of InAs/GaAs quantum posts

Details Strain driven migration of In during the growth of InAs/GaAs quantum posts Strain driven migration of In during the growth of InAs/GaAs quantum posts

2011-08-08

arxiv.org/abs/1108.1768v1

Physics

Condensed Matter

Materials Science

6 pages, 4 figures. To be submitted to Physical Review Letters

Scientific paper

Using an in-situ accumulated stress sensor, we observe a counter-intuitive reduction of the accumulated stress during In deposition on GaAs and have found, through modeling of the strain field, a hypothesis that quantitatively explains the experimental data. This effect is only observed during epitaxial growth of InAs/GaAs quantum posts, and not during growth of Stransky-Krastanov self-assembled quantum dots.

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