Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

Details Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

2010-11-17

arxiv.org/abs/1011.3978v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

The following article has been submitted to Applied Physics Letters. After it is published, it will be found at http://apl.aip

Scientific paper

SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and functional device with a TiN+Al gate stack and source, gate, and drain contacts in place. The strain fields in the Si channel were explored using an x-ray beam focused to 400 nm diameter combined with finite element simulations. A maximum in-plane tensile strain of about 1% in the Si channel was found, which is by a factor of three to four higher than achievable for dislocation-free tensile strained Si in state-of-the-art devices.

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