Strain-controlled band engineering and self-doping in ultrathin LaNiO$_3$ films

Details Strain-controlled band engineering and self-doping in ultrathin LaNiO$_3$ films Strain-controlled band engineering and self-doping in ultrathin LaNiO$_3$ films

2012-04-10

arxiv.org/abs/1204.2039v1

http://link.aps.org/doi/10.1103/PhysRevB.85.121106 (2012)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1103/PhysRevB.85.121106

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO$_3$ films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the transport coefficients evolve in a manner strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in the transport properties are due to self-doping in the low-energy electronic band structure. The results imply that thin-film epitaxy can serve as a new means to achieve hole-doping in other (negative) charge-transfer gap transition metal oxides without resorting to chemical substitution.

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