Strain control of electron-phonon energy loss rate in many-valley semiconductors

Details Strain control of electron-phonon energy loss rate in many-valley semiconductors Strain control of electron-phonon energy loss rate in many-valley semiconductors

2011-01-31

arxiv.org/abs/1101.5889v1

Appl. Phys. Lett. 98, 182103 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3579524

We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

Affiliated with

Also associated with

No associations

Rating

Strain control of electron-phonon energy loss rate in many-valley semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Strain control of electron-phonon energy loss rate in many-valley semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strain control of electron-phonon energy loss rate in many-valley semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-647399