Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized Electron Emission

Details Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized Electron Emission Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized Electron Emission

2005-01-08

arxiv.org/abs/cond-mat/0501159v1

Physics

Condensed Matter

Other Condensed Matter

10 pages, 2 figures

Scientific paper

10.1063/1.1920416

Spin-polarized electron emission from the first superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is complished using an InAlGaAs/GaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 um-thick working layer are close to the best results reported for any strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.

Affiliated with

Also associated with

No associations

Rating

Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized Electron Emission does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized Electron Emission, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized Electron Emission will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-165385