Strain balanced quantum posts

Details Strain balanced quantum posts Strain balanced quantum posts

2011-02-22

arxiv.org/abs/1102.4490v3

Appl. Phys. Lett. 98, 173106 (2011)

Physics

Condensed Matter

Materials Science

Submitted to Applied Physics Letters (7th March 2011). 4 pages, 4 figures

Scientific paper

10.1063/1.3583455

Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.

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