Stokes shift in quantum wells: trapping versus thermalization

Details Stokes shift in quantum wells: trapping versus thermalization Stokes shift in quantum wells: trapping versus thermalization

1996-09-17

arxiv.org/abs/cond-mat/9609160v1

Physics

Condensed Matter

File apstex, 12 p. + 4 Figures, to appear on Phys. Rev. B (Brief Reports.), 15 Dec. 1996. The figures will be faxed upon reque

Scientific paper

10.1103/PhysRevB.54.16389

Low temperature photoluminescence and photoluminescence excitation measurements have been performed in a set of InGaAs/GaAs samples with different indium molar fraction, well width, growth conditions and post-growth treatment. This has allowed to change in a controlled way the degree and source of disorder in the samples, thus resulting in an excitonic absorption linewidth varying between 1 and 18 meV, and an ensueing Stokes shift changing between zero and 8 meV. The conditions of validity of two different models relating the Stokes shift to the linewidth broadening have been established in terms of different regimes of disorder and temperature. A continuous transition between those regimes has been demonstrated.

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