Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs

Details Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs

2008-03-22

arxiv.org/abs/0803.3245v1

Physics

Condensed Matter

Materials Science

12 pages, 3 figures

Scientific paper

10.1063/1.2927481

Heavily-alloyed, 100 nm Ga1-xMnxAs (x>0.1) films are obtained via low temperature molecular beam epitaxy utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible, optimized electronic, magnetic and structural properties are found in a narrow range of stoichiometric growth conditions. The Curie temperature of stoichiometric material is 150-165 K and independent of x within a large window of growth conditions while substitutional Mn content increases linearly, contradicting the prediction of the Zener Model of hole-mediated ferromagnetism.

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