STM tunneling through a quantum wire with a side-attached impurity

Details STM tunneling through a quantum wire with a side-attached impurity STM tunneling through a quantum wire with a side-attached impurity

2007-12-18

arxiv.org/abs/0712.2907v1

Phys. Lett. A372, 154 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 6 figures

Scientific paper

10.1016/j.physleta.2007.08.017

The STM tunneling through a quantum wire (QW) with a side-attached impurity (atom, island) is investigated using a tight-binding model and the nonequilibrium Keldysh Green function method. The impurity can be coupled to one or more QW atoms. The presence of the impurity strongly modifies the local density of states of the wire atoms, thus influences the STM tunneling through all the wire atoms. The transport properties of the impurity itself are also investigated mainly as a function of the wire length and the way it is coupled to the wire. It is shown that the properties of the impurity itself and the way it is coupled to the wire strongly influence the STM tunneling which is reflected in the density of states and differential conductance.

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