STM investigation of structural properties of Si layers deposited on Si(001) vicinal surfaces

Details STM investigation of structural properties of Si layers deposited on Si(001) vicinal surfaces STM investigation of structural properties of Si layers deposited on Si(001) vicinal surfaces

2012-04-05

arxiv.org/abs/1204.1297v1

Physics

Condensed Matter

Materials Science

International Symposium on Nanostructures; http://www.ioffe.ru/NANO2012/

Scientific paper

This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes of generation and growth of surface defects to depend on tilt direction of a Si(001) wafer and epilayer growth mode. We suppose these effects to be connected with mutual interaction of monoatomic steps.

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