STM induced hydrogen desorption via a hole resonance

Details STM induced hydrogen desorption via a hole resonance STM induced hydrogen desorption via a hole resonance

1998-02-27

arxiv.org/abs/cond-mat/9802304v1

Phys. Rev. Lett. 80, 2618 (1998).

Physics

Condensed Matter

Materials Science

4 pages, 4 figures. To appear in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.80.2618

We report STM-induced desorption of H from Si(100)-H(2$\times1$) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at -7 V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5$\sigma$ hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at -7 V is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.

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