Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide

Details Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide

2002-10-04

arxiv.org/abs/cond-mat/0210104v2

Pis'ma v ZhETF, vol 76, iss 9, pp.665-668 (2002); aka JETP Letters

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1134/1.1538291

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.

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