Static and Dynamic Spectroscopy of (Al,Ga)As/GaAs Microdisk Lasers with Interface Fluctuation Quantum Dots

Details Static and Dynamic Spectroscopy of (Al,Ga)As/GaAs Microdisk Lasers with Interface Fluctuation Quantum Dots Static and Dynamic Spectroscopy of (Al,Ga)As/GaAs Microdisk Lasers with Interface Fluctuation Quantum Dots

2004-05-15

arxiv.org/abs/cond-mat/0405340v2

Phys. Rev. B 71, art. no. 155306 (2005)

Physics

Condensed Matter

Materials Science

To appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.71.155306

We have studied the steady state and dynamic optical properties of semiconductor microdisk lasers whose active region contains interface fluctuation quantum dots in GaAs/(Ga,Al)As quantum wells. Steady-state measurements of the stimulated emission via whispering gallery modes yield a quality factor $Q \sim 5600$ and a coupling constant $\beta \sim 0.09$. The broad gain spectrum produces mode hopping between spectrally adjacent whispering gallery modes as a function of temperature and excitation power. Time- and energy-resolved photoluminescence measurements show that the emission rise and decay rates increase significantly with excitation power. Marked differences are observed between the radiative decay rates in processed and unprocessed samples.

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