Stark Tuning of Donor Electron Spins in Silicon

Details Stark Tuning of Donor Electron Spins in Silicon Stark Tuning of Donor Electron Spins in Silicon

2006-03-12

arxiv.org/abs/cond-mat/0603324v1

PRL 97, 176404 (2006)

Physics

Condensed Matter

Materials Science

10 pages, 4 figures, to be submitted to PRL

Scientific paper

10.1103/PhysRevLett.97.176404

We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.

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