Stacking Faults, Bound States, and Quantum Hall Plateaus in Crystalline Graphite

Details Stacking Faults, Bound States, and Quantum Hall Plateaus in Crystalline Graphite Stacking Faults, Bound States, and Quantum Hall Plateaus in Crystalline Graphite

2008-09-15

arxiv.org/abs/0809.2543v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

19 pages

Scientific paper

10.1103/PhysRevB.78.245416

We analyze the electronic properties of a simple stacking defect in Bernal graphite. We show that a bound state forms, which disperses as $|\bfk-\bfK|^3$ in the vicinity of either of the two inequivalent zone corners $\bfK$. In the presence of a strong c-axis magnetic field, this bound state develops a Landau level structure which for low energies behaves as $E\nd_n\propto |n B|^{3/2}$. We show that buried stacking faults have observable consequences for surface spectroscopy, and we discuss the implications for the three-dimensional quantum Hall effect (3DQHE). We also analyze the Landau level structure and chiral surface states of rhombohedral graphite, and show that, when doped, it should exhibit multiple 3DQHE plateaus at modest fields.

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