Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2011-03-31
Nature Physics 7, 948--952 (2011)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
minor revision; published version
Scientific paper
10.1038/nphys2103
In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with different stacking orders. At the Dirac point, ABA-stacked TLG remains metallic while the ABC counterpart becomes insulating. The latter exhibits a gap-like dI/dV characteristics at low temperature and thermally activated conduction at higher temperatures, indicating an intrinsic gap ~6 meV. In magnetic fields, in addition to an insulating state at filling factor {\nu}=0, ABC TLG exhibits quantum Hall plateaus at {\nu}=-30, \pm 18, \pm 9, each of which splits into 3 branches at higher fields. Such splittings are signatures of the Lifshitz transition induced by trigonal warping, found only in ABC TLG, and in semi-quantitative agreement with theory. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.
Jairo Velasco Jr.
Aykol M.
Bao Wei
Bockrath Marc
Cronin Stephen B.
No associations
LandOfFree
Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-244945