Stabilization of amorphous GaN by oxygen

Details Stabilization of amorphous GaN by oxygen Stabilization of amorphous GaN by oxygen

2004-07-26

arxiv.org/abs/cond-mat/0407659v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.2014937

Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence of non-tetrahedral bonds centered on oxygen. The ionic favourability of heteropolar bonds and its strikingly simple constraint to even-membered rings is the likely cause of the instability of stoichiometric a-GaN.

Affiliated with

Also associated with

No associations

Rating

Stabilization of amorphous GaN by oxygen does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Stabilization of amorphous GaN by oxygen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stabilization of amorphous GaN by oxygen will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-86626