Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

Details Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

2011-04-26

arxiv.org/abs/1104.4930v1

Physical Review B 83, 241303 (2011)

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

10.1103/PhysRevB.83.241303

The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitude higher than the corresponding value for intraband scattering in the noble metal surface states. The stability of the topological state with respect to surface irregularities was also tested by introducing a small concentration of surface defects via ion bombardment. It is found that, in contrast to the bulk states, the topological state can no longer be observed in the photoemission spectra and this cannot merely be attributed to surface defect-induced momentum broadening.

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