Spontaneously gapped ground state in suspended bilayer graphene

Details Spontaneously gapped ground state in suspended bilayer graphene Spontaneously gapped ground state in suspended bilayer graphene

2011-04-19

arxiv.org/abs/1104.3816v2

Phys. Rev. Lett. 108, 076602 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.108.076602

Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the electrical transport in clean current annealed suspended bilayer graphene. We find two kind of devices. In bilayers of type B1 the eight-fold zero-energy Landau level (LL) is partially lifted above a threshold field revealing an insulating nu=0 quantum Hall state at the charge neutrality point (CNP). In bilayers of type B2 the LL lifting is full and a gap appears in the differential conductance even at zero magnetic field, suggesting an insulating spontaneously broken symmetry state. Unlike B1, the minimum conductance in B2 is not exponentially suppressed, but remains finite with a value G < e^2/h even in a large magnetic field. We suggest that this phase of B2 is insulating in the bulk and bound by compressible edge states.

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