Spirals on Si(111) at sublimation and growth: REM and LODREM observations

Details Spirals on Si(111) at sublimation and growth: REM and LODREM observations Spirals on Si(111) at sublimation and growth: REM and LODREM observations

2007-06-15

arxiv.org/abs/0706.2308v1

Surface Science 600(2006) 4848

Physics

Condensed Matter

Materials Science

21 pages, 8 figures

Scientific paper

10.1016/j.susc.2006.08.015

Using recently proposed improvements of Reflection Electron Microsopy (REM) we study in perfectly controlled thermodynamics conditions spiral shapes and spirals on Si(111) surface. It is shown that the new method named low distortion reflection electron microscopy (LODREM) is a powerful instrument, resolving in much more details (compared with REM) growth or evaporation spirals at the crystal surface. More precisely, we examine the distance between two successive steps of a spiral at growth (or evaporation) with respect to the supersaturation (or undersaturation). It is found that this distance scales with an exponent close to -1/2. This result, which deviates from the BCF theory originates from a non local behavior with a slow kinetic of attachment of the adatoms at the steps.

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