Spiral Growth and Step Edge Barriers

Details Spiral Growth and Step Edge Barriers Spiral Growth and Step Edge Barriers

2007-09-14

arxiv.org/abs/0709.2327v1

Phys. Rev. Lett. 100, 035506 (2008)

Physics

Condensed Matter

Materials Science

11 pages, 4 figures, partly in color

Scientific paper

10.1103/PhysRevLett.100.035506

The growth of spiral mounds containing a screw dislocation is compared to the growth of wedding cakes by two-dimensional nucleation. Using phase field simulations and homoepitaxial growth experiments on the Pt(111) surface we show that both structures attain the same characteristic large scale shape when a significant step edge barrier suppresses interlayer transport. The higher vertical growth rate observed for the spiral mounds on Pt(111) reflects the different incorporation mechanisms for atoms in the top region and can be formally represented by an enhanced apparent step edge barrier.

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