Spin Valve Effect in ZigZag Graphene Nanoribbons by Defect Engineering

Details Spin Valve Effect in ZigZag Graphene Nanoribbons by Defect Engineering Spin Valve Effect in ZigZag Graphene Nanoribbons by Defect Engineering

2009-10-21

arxiv.org/abs/0910.4043v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

We report on the possibility for a spin valve effect driven by edge defect engineering of zigzag graphene nanoribbons. Based on a mean-field spin unrestricted Hubbard model, electronic band structures and conductance profiles are derived, using a self-consistent scheme to include gate-induced charge density. The use of an external gate is found to trigger a semiconductor-metal transition in clean zigzag graphene nanoribbons, whereas it yields a closure of the spin-split bandgap in the presence of Klein edge defects. These features could be exploited to make novel charge and spin based switches and field effect devices.

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