Spin tunneling through an indirect barrier

Details Spin tunneling through an indirect barrier Spin tunneling through an indirect barrier

2006-01-13

arxiv.org/abs/cond-mat/0601297v1

Phys. Rev. B 73, 075313 (2006)

Physics

Condensed Matter

Materials Science

19 pages, 7 figures

Scientific paper

10.1103/PhysRevB.73.075313

Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus Hamiltonians at $\Gamma $ and $X$ points in the barrier and by Fano resonances. The present results suggest that large spin polarization can be obtained for energy windows that exceed significantly the spin splitting. We also formulate two conditions that are necessary for the existence of energy windows with large polarization.

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