Spin-transfer switching and low-field precession in exchange-biased spin valve nano-pillars

Details Spin-transfer switching and low-field precession in exchange-biased spin valve nano-pillars Spin-transfer switching and low-field precession in exchange-biased spin valve nano-pillars

2008-02-07

arxiv.org/abs/0802.1003v1

Physics

Condensed Matter

Materials Science

11 pages, 4 figures. To appear in APL, April 2008

Scientific paper

10.1063/1.2905816

Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer.

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