Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions

Details Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions

2004-03-31

arxiv.org/abs/cond-mat/0404002v2

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.1781769

We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin-polarized at these voltages.

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