Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions

Details Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions

2005-10-28

arxiv.org/abs/cond-mat/0510786v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.96.186603

We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that the spin torque per unit current exerted on the free layer decreases by less than 10% over a bias range where the TMR decreases by over 40%. We examine the implications of this result for various spin-polarized tunneling models and find that it is consistent with magnetic-state-dependent effective tunnel decay lengths.

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