Spin swap vs. double occupancy in quantum gates

Details Spin swap vs. double occupancy in quantum gates Spin swap vs. double occupancy in quantum gates

2004-02-27

arxiv.org/abs/cond-mat/0402674v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 2 figures

Scientific paper

10.1103/PhysRevB.70.161311

We propose an approach to realize quantum gates with electron spins localized in a semiconductor that uses double occupancy to advantage. With a fast (non-adiabatic) time control of the tunnelling, the probability of double occupancy is first increased and then brought back exactly to zero. The quantum phase built in this process can be exploited to realize fast quantum operations. We illustrate the idea focusing on the half-swap operation, which is the key two-qubit operation needed to build a CNOT gate.

Affiliated with

Also associated with

No associations

Rating

Spin swap vs. double occupancy in quantum gates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin swap vs. double occupancy in quantum gates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin swap vs. double occupancy in quantum gates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-293828