Spin susceptibility of two dimensional hole gases in GaAs/AlGaAs heterostructures

Details Spin susceptibility of two dimensional hole gases in GaAs/AlGaAs heterostructures Spin susceptibility of two dimensional hole gases in GaAs/AlGaAs heterostructures

2004-09-21

arxiv.org/abs/cond-mat/0409551v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1016/j.ssc.2005.03.061

We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic field. We observed an enhancement of the spin susceptibility over the bulk value that increases as the density is decreased in qualitative agreement with Quantum Monte Carlo calculations. The measured enhancement factor increases from 2.8 to 4.8 as the hole density is decreased.

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