Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon

Details Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon

2009-02-05

arxiv.org/abs/0902.0887v1

Phys. Rev. B 79, 205314 (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1103/PhysRevB.79.205314

We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility that grows strongly at low densities. The polarization field, B_sat, determined by resistance saturation, turns out to deviate to lower values than B_chi with increasing electron density, which can be explained by filling of the upper electron subbands in the fully spin-polarized regime.

Affiliated with

Also associated with

No associations

Rating

Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-25868