Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits

Details Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits

2011-10-21

arxiv.org/abs/1110.4742v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.

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