Spin Readout and Initialization in a Semiconductor Quantum Dot

Details Spin Readout and Initialization in a Semiconductor Quantum Dot Spin Readout and Initialization in a Semiconductor Quantum Dot

2003-04-17

arxiv.org/abs/cond-mat/0304422v2

Phys. Rev. Lett. v92, p037901 (2004)

Physics

Condensed Matter

Materials Science

Published version

Scientific paper

10.1103/PhysRevLett.92.037901

Electron spin qubits in semiconductors are attractive from the viewpoint of long coherence times. However, single spin measurement is challenging. Several promising schemes incorporate ancillary tunnel couplings that may provide unwanted channels for decoherence. Here, we propose a novel spin-charge transduction scheme, converting spin information to orbital information within a single quantum dot by microwave excitation. The same quantum dot can be used for rapid initialization, gating, and readout. We present detailed modeling of such a device in silicon to confirm its feasibility.

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