Spin-pumping-induced spin transport in p-type Si at room temperature

Details Spin-pumping-induced spin transport in p-type Si at room temperature Spin-pumping-induced spin transport in p-type Si at room temperature

2011-07-02

arxiv.org/abs/1107.0376v3

Physics

Condensed Matter

Materials Science

23pages, 5 figures

Scientific paper

Spin transport in inorganic semiconductors provides an indispensable building block for realizing so-called beyond-CMOS technologies. Since the spin-orbit interaction in Si is essentially smaller than in GaAs, Si-based functional devices using the spin degree of freedom is recognized to be very promising with respect to spin coherence. Whereas spin transport at room temperature (RT) in n-type Si and GaAs has been reported previously, spin transport in p-type Si has not been experimentally realized3, which is an important and unexplored milestone in spintronics. Successful observations of spin transport in n- and p-type Si are significant for constructing future spin-based logic systems, such as for the charge transport in Si for operating conventional logic circuits. Here we show experimental demonstration of spin-pumping-induced spin current generation and spin transport in p-type Si at RT.

Affiliated with

Also associated with

No associations

Rating

Spin-pumping-induced spin transport in p-type Si at room temperature does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin-pumping-induced spin transport in p-type Si at room temperature, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin-pumping-induced spin transport in p-type Si at room temperature will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-175224