Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

Details Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

2011-01-10

arxiv.org/abs/1101.1691v2

Phys. Rev. B 84, 054410 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Final version, with text restructured and appendices added (25 pages, 9 figures). To appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.84.054410

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even dominate the accumulation and dynamics of spins in the semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous and non-collinear with the injector magnetization. The inverted Hanle effect serves as experimental signature. This interaction needs to be taken into account in the analysis of experimental data, particularly in extracting the spin lifetime and its variation with different parameters (temperature, doping concentration). It produces a broadening of the standard Hanle curve and thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si at room temperature it is shown that the spin lifetime is larger than previously determined, and a new lower bound of 0.29 ns is obtained. The results are expected to be general and occur for spins near a magnetic interface not only in semiconductors but also in metals, organic and carbon-based materials including graphene, and in various spintronic device structures.

Affiliated with

Also associated with

No associations

Rating

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-455190