Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes

Details Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes

2005-08-23

arxiv.org/abs/cond-mat/0508548v1

Physics

Condensed Matter

Materials Science

To appear in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.95.137203

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.

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