Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

Details Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

2006-10-10

arxiv.org/abs/cond-mat/0610275v1

Physics

Condensed Matter

Other Condensed Matter

3 pages, 4 figures

Scientific paper

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials.

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