Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $ν=0$ in High Magnetic Fields

Details Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $ν=0$ in High Magnetic Fields Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $ν=0$ in High Magnetic Fields

2011-02-01

arxiv.org/abs/1102.0265v2

Phys. Rev. Lett. 107, 016803 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 5 figures

Scientific paper

10.1103/PhysRevLett.107.016803

We investigate the transverse electric field ($E$) dependence of the $\nu$=0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity ($\rho_{xx}$) measured at $\nu$=0 shows an insulating behavior which is strongest in the vicinity of $E$=0, and at large $E$-fields. At a fixed perpendicular magnetic field ($B$), the $\nu$=0 QHS undergoes a transition as a function of $E$, marked by a minimum, temperature-independent $\rho_{xx}$. This observation is explained by a transition from a spin polarized $\nu$=0 QHS at small $E$-fields, to a valley (layer) polarized $\nu$=0 QHS at large $E$-fields. The $E$-field value at which the transition occurs has a linear dependence on $B$

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