Spin-Polarized Electron Injection through an Fe/InAs Junction

Details Spin-Polarized Electron Injection through an Fe/InAs Junction Spin-Polarized Electron Injection through an Fe/InAs Junction

2003-01-09

arxiv.org/abs/cond-mat/0301109v1

Jpn. J. Appl. Phys. Pt.2 Vol.40, No.2A, pp.L87-L89 (2003)

Physics

Condensed Matter

Materials Science

8 pages, 3 figures, to appear in Japanese Journal of Applied Physics Pt2 Express Letter

Scientific paper

10.1143/JJAP.42.L87

We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12 % at the temperature of 6.5 K and the external magnetic field of 10 T. This result suggests that the efficient spin injection is possible through the ferromagnetic metal/semiconductor (FM/SC) interface without a tunneling barrier despite the contradictory arguments based on conductivity mismatch at the FM/SC interface.

Affiliated with

Also associated with

No associations

Rating

Spin-Polarized Electron Injection through an Fe/InAs Junction does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin-Polarized Electron Injection through an Fe/InAs Junction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin-Polarized Electron Injection through an Fe/InAs Junction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-724860