Spin polarization of (Ga,Mn)As measured by Andreev Spectroscopy: The role of spin-active scattering

Details Spin polarization of (Ga,Mn)As measured by Andreev Spectroscopy: The role of spin-active scattering Spin polarization of (Ga,Mn)As measured by Andreev Spectroscopy: The role of spin-active scattering

2010-08-10

arxiv.org/abs/1008.1788v2

Phys. Rev. B 83, 081305(R) (2011)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.83.081305

We investigate the spin-polarization of the ferromagnetic semiconductor (Ga,Mn)As by point contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a recent theoretical model that accounts for momentum- and spin-dependent scattering at the interface. This allows us to fit the data without resorting, as in the case of the standard spin-dependent Blonder-Tinkham-Klapwijk (BTK) model, to an effective temperature or a statistical distribution of superconducting gaps. We find a transport polarization PC{\approx}57%, in considerably better agreement with the k{\cdot}p kinetic-exchange model of (Ga,Mn)As, than the significantly larger estimates inferred from the BTK model. The temperature dependence of the conductance spectra is fully analyzed.

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