Spin polarization and metallic behavior of a silicon two-dimensional electron system

Details Spin polarization and metallic behavior of a silicon two-dimensional electron system Spin polarization and metallic behavior of a silicon two-dimensional electron system

2003-07-22

arxiv.org/abs/cond-mat/0307521v2

Phys. Rev. B 69, 041202R (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, RevTeX, 6 eps-figures

Scientific paper

10.1103/PhysRevB.69.041202

We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of the spin susceptibility is consistent with that in Si-MOS structures. Temperature dependence of resistivity remains metallic even in strong magnetic fields where the spin degree of freedom is frozen out. We also found a magnetoresistance anisotropy with respect to an angle between the current and the in-plane magnetic field.

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