Spin lifetimes and strain-controlled spin precession of drifting electrons in zinc blende type semiconductors

Details Spin lifetimes and strain-controlled spin precession of drifting electrons in zinc blende type semiconductors Spin lifetimes and strain-controlled spin precession of drifting electrons in zinc blende type semiconductors

2005-04-26

arxiv.org/abs/cond-mat/0504668v1

Europhys. Lett., 75 (4), pp. 597-603 (2006)

Physics

Condensed Matter

Materials Science

5 pages, 6 figures

Scientific paper

10.1209/epl/i2006-10151-4

We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the presence of strain, the induced spin splitting from the observed spin precession. Controlled variation of strain along [110] allows us to deduce the deformation potential causing this effect, while strain along [100] has no effect. The electric field dependence of the spin lifetime is explained quantitatively in terms of an increase of the electron temperature.

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