Spin lifetime in silicon in the presence of parasitic electronic effects

Details Spin lifetime in silicon in the presence of parasitic electronic effects Spin lifetime in silicon in the presence of parasitic electronic effects

2007-04-30

arxiv.org/abs/0704.3928v1

J. Appl. Phys. 102, 013901 (2007)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2750411

A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized electrons and use this electronic control to change the transit time between electron injection and detection. A measurement of normalized magnetocurrent as a function of drift velocity is used with a simple exponential-decay model to argue that the lifetime obtained (~2 ns) is artificially lowered by electronic effects and is likely orders of magnitude higher.

Affiliated with

Also associated with

No associations

Rating

Spin lifetime in silicon in the presence of parasitic electronic effects does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin lifetime in silicon in the presence of parasitic electronic effects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin lifetime in silicon in the presence of parasitic electronic effects will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-415365