Spin injection from perpendicular magnetized ferromagnetic $δ$-MnGa into (Al,Ga)As heterostructures

Details Spin injection from perpendicular magnetized ferromagnetic $δ$-MnGa into (Al,Ga)As heterostructures Spin injection from perpendicular magnetized ferromagnetic $δ$-MnGa into (Al,Ga)As heterostructures

2006-05-31

arxiv.org/abs/cond-mat/0606013v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.2349833

Electrical spin injection from ferromagnetic $\delta$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $\delta$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.

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